Figure 4
From: Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
Statistical cycle-to-cycle resistance variations between (a) non-annealed and (b) annealed Ru/MgO/Ta RSM devices. It is evident that despite a lower ON/OFF ratio, annealed RSM devices exhibit less cycle-to-cycle resistance variation as compared to annealed ones.
