Figure 7
From: Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
ln(current) vs. sqrt(voltage) and linear fitting for Ru/MgO/Cu RSM devices at (a) 300 K, (b) 325 K, (c) 350 K, (d) 375 K. The linear fitting shows that Ru/MgO/Cu RSM devices also exhibit SE.
