Figure 4
The X-ray-induced photocurrent as temporal response observed from Schottky diode (a) without and (b) with Cl doping. (c) The comparison of the temporal behavior of photocurrent signals from un-doped CdTe and Cl-doped CdTe devices under reverse bias. As soon as the bias is applied, a sudden jump of J is noted. (d) Signal charges are plotted as a function of the exposure level (R) which is measured by X-ray dosage meter, and R is proportional to peak acceleration voltage (90 kVp) x beam current (8 mA) x duration (8 sec). Sensitivity is defined as the slope, and it becomes 50 times higher by Cl doping.
