Table 1 Summary of performance of n-type organic phototransistor.

From: Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

Semiconductor

Material

State(Substrate)

P

Light Source

(nm)

Intensity

(μW cm−2)

Ref.

PDI-Cn

flat(SiO2/Si)

(a)103

580

7.06

34

(b)9

(c)100

BPE-PTCDI

flat(SiO2/Si)

4.96 × 103

green

113000

23

PTCDI-C13H27

flat (PET)

4 × 104

532

22200

23

PDIF-CN2

flat(SiO2/Si)

5 × 103

white light

5060

40

BPE-PTCDI/rGO

flat(SiO2/Si)

>10

640

17600

41

PTCDI-C8

flat(SiO2/Si)

>100

—

15000

36

EH PDI

flat(SiO2/Si)

63.82

525

91060

42

F16CuPc(thin-film)

flat(BPDA-ODA)

300

white light

5660

43

F16CuPc

flat(glass)

79

white light

5980

37

NDI(2OD)(4tBuPh)-DTYM2

PTCDI-C13

flat(SiO2/Si)

flat(PVA)

1.1 × 107

2.8 × 104

white light

489

107

100

44

Our work

 

2D conformal (PVA)

3D conformal (PVA)

(d)2.2 × 104

2 × 104

   
  1. (a)Thin film, (b)multifib, (c)monofib, (d)average value at different bending radius48,49,50,51.