Figure 4
Left panel: reconstructed decay of the charge carrier density, N, inside silicon constituent of p-Si as a function of the sample depth and delay time, Δt. Right panel: representative decay curves of the charge carrier density, N, at three different distances from the sample surface; red - on the surface: z = 0, green - z = 6 and blue - z = 12 μm. Solid lines represent the model best-fitted to the experimental data, which are shown as dots. For convenience, the same lines are shown on the left panel as well. The black dashed line is the average carrier density, 〈N(t)〉.
