Figure 5
From: Silicon germanium photo-blocking layers for a-IGZO based industrial display
Vth and mobility of a-IGZO TFTs passivated by the Si-Ge films depending on the light stress time. (a) Vth change of a-IGZO TFTs passivated by the Si-Ge photo-blocking layers as a function of the light illumination compared with pristine a-IGZO. (b) Electron mobility change of a-IGZO TFTs passivated by the Si-Ge photo-blocking layers depending on light stress time.
