Figure 4 | Scientific Reports

Figure 4

From: Enhancement in surface mobility and quantum transport of Bi2−xSbxTe3−ySey topological insulator by controlling the crystal growth conditions

Figure 4

Gate-dependent resistances of MG (a), BG (c), and MBG (e) grown BSTS measured at RT and base temperature of 1.5 K. Optical images of the corresponding BSTS devices are inserted in (a,c) (scale bar = 50 μm). 2D color plots of the four-probe resistance as a function of temperature and gate voltage for MG (b), BG (d), and MBG (f) grown BSTS samples.

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