Figure 5 | Scientific Reports

Figure 5

From: Enhancement in surface mobility and quantum transport of Bi2−xSbxTe3−ySey topological insulator by controlling the crystal growth conditions

Figure 5

Longitudinal resistivity (a) and Hall resistance (b) of the MG, BG and MBG BSTS devices as a function of gate voltage measured at magnetic field of 0 T (a) and 2 T (b). Comparison of the Hall mobilities of the three-methods grown BSTS devices at different carrier densities at base temperature of 1.6 K (c). The error bars in (c) present the standard deviation of the Hall mobilities calculated at ±10% of the carrier densities (2 × 1011 cm−2 and 2 × 1012 cm−2 for low and high densities, respectively). Hall mobilities as a function surface charge density for BSTS grown by three different methods (d).

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