Figure 6
From: Artificial Neuron using Vertical MoS2/Graphene Threshold Switching Memristors
(a) I-V characteristics of v-MoS2/graphene device over 40 cycles. (b) Variation of V1 and V2 over 40 cycles. (c) Number of HRS-LRS and LRS-HRS transitions corresponding to a particular V1 and V2, respectively. (d) Cumulative distribution function of V1 and V2.
