Table 1 Atomic structure (bond number): SiNOH + X (X = B, P, C).
From: The role of defects in organic image sensors for green photodiode
Partial bond number for H tom | |||
|---|---|---|---|
C | B | P | |
Si | 2.83 | 0.51 | 1.46 |
N | 0.21 | 2.67 | 0.33 |
O | 0 | 0 | 0.17 |
H | 0.66 | 0.16 | 0.12 |
Total | 3.71 | 3.37 | 2.43 |
(Si-Si)/(Si-X) | 3.7 | 10 | 2.8 |
Si dangling bond | 2 | 10 | 2 |
N dangling bond | 1 | 2 | 0 |
