Figure 2
From: Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories
(a) Ta 3d5/2 and (b) Ti 1s core level peaks obtained by HAXPES at 6.9 keV on as-grown, formed and reset sample of the TaN/TiTe/Al2O3/Ta stack.
Figure 2 | Scientific Reports
