Table 2 Binding energies (eV) of the Ta 3d5/2, Ti 1s, Te 3d3/2 and Al 1s components measured for the as-grown, formed and reset samples27.
From: Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories
Components | Binding energies (eV) | |||
|---|---|---|---|---|
As-Grown | Formed | Reset | ||
Ta 3d5/2 | Ta | 1731.5 | 1731.7 | 1731.7 |
TaOx or TaN | 1734.1 | 1734.2 | 1734.2 | |
Ta2O5 | 1735.8 | 1736.0 | 1736.0 | |
Ti 1s | TiTe | 4965.5 | 4965.7 | 4965.7 |
TiOx | 4966.9 | 4967.1 | 4967.1 | |
TiO2 | 4968.7 | 4968.9 | 4968.9 | |
Te 3d3/2 | TiTe | 582.9 | 583.1 | 583.1 |
Te | 583.5 | 583.7 | 583.7 | |
TeOx | 584.8 | 585.0 | 585.0 | |
Al 1s | AlOx | 1562.0 | 1562.2 | 1562.2 |
Al2O3 | 1562.8 | 1563.0 | 1563.0 | |
