Table 5 Relative areas (%) of the Te 3d3/2 components for the as-grown, formed and reset samples.
From: Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories
TiTe | Te | TeOx | |
|---|---|---|---|
As-grown | 69.1 ± 0.1 | 26.0 ± 0.3 | 4.9 ± 0.4 |
Formed | 61.9 ± 0.1 | 32.6 ± 0.3 | 5.5 ± 0.4 |
Reset | 64.2 ± 0.1 | 29.9 ± 0.3 | 5.9 ± 0.4 |
