Table 6 Relative areas (%) of the Al 1s components measured outside the top electrode and for the as-grown, formed and reset samples.
From: Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories
Al2O3 | AlOx | |
|---|---|---|
Al2O3/Ta | 90.9 ± 0.2 | 9.1 ± 0.4 |
As-grown | 74.7 ± 0.2 | 25.3 ± 0.4 |
Formed | 83.7 ± 0.2 | 16.3 ± 0.4 |
Reset | 79.5 ± 0.2 | 20.5 ± 0.4 |
