Figure 3
From: GeVn complexes for silicon-based room-temperature single-atom nanoelectronics
Charge transition levels of GeVn complexes compared to those of conventional dopant atoms and those of a bare silicon vacancy51. The reference for the energy scale is the conduction-band minimum (CBm). Red horizontal line: the thermal energy at room temperature (kBTr). The shaded area highlights the thermal-excitation probability in a 5kBTr-wide region below the CBm. Charge transition levels corresponding to the excitation of one and two electron are identified by thin and thick lines, respectively. The charge transition levels of P and As are taken from ref.52 while those of the single vacancy from ref.51.
