Figure 4
From: GeVn complexes for silicon-based room-temperature single-atom nanoelectronics
Iso-surfaces (yellow, iso-level = 0.001 electrons/Å3) for the electronic density of the two lowest negative ionization states of GeV, namely (a) at −0.51 eV and (b) at −0.35 eV, corresponding to D− and D2−, respectively. The density for 2 bound electrons differs from that of 1 electron by far more than a pure factor 2: it takes full (electronic and structural) relaxation into account, in particular as induced by the electron-electron Coulomb repulsion. The side of the simulation cell (black square) is 1.64 nm.
