Figure 3
From: Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(a) Id − Vg, (b) S − Id, for a C-S TFET device with GaSb diameter of 35 nm, InAs shell thickness approximately 4 nm, and Lg approximately 35 nm. Smin equals 50 mV/dec at Vd = 10 mV.
