Figure 4
From: Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(a) Id − Vd at 300 K and (b) 10 K for a C-S TFET. Negative differential resistance is visible for negative Vd at 10 K, an indication of band-to-band-tunneling operation in the device. The noise present in the saturation region may be due to discrete trapping events in the high-k and is commonly observed in nanowire FET devices of small dimensions8.
