Figure 7
From: Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(a) Imin versus Imax at Vd = 0.3 V for devices grown intentionally without InAs shell (red circles) and devices with shell grown for 3 min (blue diamonds). Each point has the same gate-voltage sweep range. (b) Id − Vg at Vd = 0.05 and 0.3 V for a device with shell (blue circle) and grown intentionally without shell (red circle). The devices without shell provide a measure of the axial leakage across the GaAs barrier. Axial leakage is at least 100× less than the measured current.
