Figure 8
From: Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(a) Id − Vg versus temperature at Vd = 0.3 V for a C-S TFET device. Off current and subthreshold swing both reduce with reducing temperature. (b) Activation energy extracted from an Arrhenius plot of data in (a) versus gate voltage.
