Figure 5
From: Fabrication of transition metal dichalcogenides quantum dots based on femtosecond laser ablation
(a,c) UV–vis ABS (black line), PLE (red line) and PL (blue line) of the MoS2 QDs and WS2 QDs, respectively. (b,d) Excitation-dependent PL emission behaviour of the MoS2 QDs and WS2 QDs, respectively, excited at wavelengths from 300 to 480 nm. The inserts of (a,c) show photographs of the bulk materials and the corresponding QDs taken under visible (left) and 395 nm UV (right) lights.
