Figure 2 | Scientific Reports

Figure 2

From: Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer

Figure 2

Cross-sectional TEM images of green LEDs cut in the (10–10) zone axis. (a,d) Cross-sectional BF TEM images showing screw (S), edge (E), and mixed (M) dislocations. (b,e) Cross-sectional BF TEM images with g = (0002) showing screw and mixed type dislocations. (c,f) Cross-sectional BF TEM images with g = (11–20) showing edge and mixed type dislocations.

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