Figure 4
From: Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure
(a) Schottky barriers \({{\rm{\Phi }}}_{{\rm{B}},{\rm{n}}}^{0}\), \({{\rm{\Phi }}}_{{\rm{B}},{\rm{p}}}^{0}\), and \({{\rm{\Phi }}}_{{\rm{B}},{\rm{n}}}^{0}\) + \({{\rm{\Phi }}}_{{\rm{B}},{\rm{p}}}^{0}\) in G/GeC vdW heterostructures as functions of the interlayer distance. Band structures of G/GeC vdW heterostructures with different interlayer distances of (b) 4.5 Å, (c) 4.0 Å, (d) 3.75 Å, (e) 3.5 Å, and (f) 3.0 Å. The zero-energy value corresponds to the Fermi level.
