Figure 2
From: Fermi level tuning of Ag-doped Bi2Se3 topological insulator
(a) ρ – T plots of single crystals of Bi2Se3 (60-nm thick), Ag0.05Bi1.95Se3 (105-nm thick) and Ag0.2Bi1.8Se3 (110-nm thick). (b) Device structure used for measuemnt of Hall effect. Jx refers to current density along x direction, and Ey refers to electric field along y direction. Here, B is applied along z direction. (c) n–T plot of Ag0.05Bi1.95Se3 (82-nm thick) determined from Hall effect measurement. (d) ρ/ρ(270 K) – T plots of single crystals of Bi2Se3 (60-nm thick), Ag0.05Bi1.95Se3 (105-nm thick) and Ag0.2Bi1.8Se3 (110-nm thick). (e) Schematic representations of electronic structures in Bi2Se3, Ag0.05Bi1.95Se3, and Ag0.2Bi1.8Se3. All transport properties were measured in four-terminal measurement mode.
