Figure 2 | Scientific Reports

Figure 2

From: Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies

Figure 2

Output characteristics of Gr-VOLET1 and comparison with the control ITO-OLED. Gate-voltage (VGS)-dependent current density-voltage (JD-VSD) (a) and luminance-voltage (L-VSD) (b) characteristics of Gr-VOLET1 with a FeCl3-doped SLG1 source for upward (left) and downward (right) changes in VGS. For comparison, the characteristics of a gate-disconnected Gr-VOLET1 (i.e., Gr-OLED1) are also shown (dotted curves). J-L-V (c) and ηC-L (d) comparisons of Gr-VOLET1 in the bright on-state (VGS = −40 V) with its respective ITO-based control OLED (ITO-OLED1, ITO/SY/CsF/Al).

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