Figure 4 | Scientific Reports

Figure 4

From: Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies

Figure 4

Gate-bias-induced modulation of SLG work functions and operation mechanism of Gr-VOLETs. (a) Gate-bias-induced modulation of the work functions of SLG sources on the VOLET substrates. (b) Energy-level diagrams of Gr-VOLET1 for high, mid, and low Φs at three distinct values of VGS at a given VSD. Φ depicts the tunnelling barrier height for the hole injection. ED: Dirac point energy of the SLG source used.

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