Table 1 Summary of the basic electronic properties of the SLGs studied here.

From: Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies

SLGs

Sheet resistance, (kΩ/square)

Work function* (eV)

Dirac point energy* (eV)

Hole/electron mobility (cm2/(V s))

SLG1

1.20

5.21 ± 0.07

4.89

410/−

SLG2

2.40

4.70 ± 0.10

4.44

580/530

SLG3

1.40

5.21 ± 0.06

4.98

530/−

  1. Average values were obtained from five individual devices for each of the device configurations studied.
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