Table 1 Carrier density, carrier mobility, and resistivity from Hall effect measurement and elemental composition of Zn, Cu, O determined by EDX measurement of ZnO and Cu doped ZnO thin films.
Films | Carrier density (nd) cm−3 | Carrier Mobility (μ) cm2v−1s−1 | Resistivity (Ω.cm) | Zn | O | Cu | |||
|---|---|---|---|---|---|---|---|---|---|
at% | wt% | at% | wt% | at% | wt% | ||||
ZnO | 6.0 * 1017 | 4.5 | 1.2 * 10−1 | 3.2 | 7.5 | 9.30 | 5.3 | ….. | ….. |
ZC3 | 2.6 * 1017 | 5.3 | 4.6 | 5.8 | 13.1 | 16.0 | 8.9 | 0.9 | 1.9 |
ZC5 | 1.4 * 1019 | 56.9 | 7.6 * 10−3 | 5.5 | 12.3 | 14.7 | 8.1 | 1.9 | 4.2 |
ZC7 | 4.5 * 1019 | 32.0 | 4.4 * 10−3 | 5.9 | 13.2 | 15.5 | 8.5 | 2.2 | 4.8 |
ZC15 | Â | Â | Â | 5.9 | 12.7 | 14.9 | 7.9 | 5.7 | 11.9 |
