Figure 4 | Scientific Reports

Figure 4

From: Synergistic effect of band convergence and carrier transport on enhancing the thermoelectric performance of Ga doped Cu2Te at medium temperatures

Figure 4

Electronic ZT vs power factor as a function of fermi level plots by LanTrap. 3D plots indicating the variation of electronic thermoelectric figure of merit ZT with their corresponding power factor for the band dispersions of (a) Cu2Te (b) Cu1.99Ga0.01Te (c) Cu1.97Ga0.03Te (d) Cu1.95Ga0.05Te. The maximum power factor of 0.0045 W m−1 K−2 was achieved in case of Cu1.95Ga0.05Te about 5.6 times the power factor of pristine Cu2Te (0.0008 W m−1 K−2) in the energy range −9 to −8 eV, which was attributed to the enhanced carrier conductivity due to the injection of mobile p-type carriers near the VBM.

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