Figure 3 | Scientific Reports

Figure 3

From: Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces

Figure 3

Electrical characterization of a-IGZO diodes with Ga-rich layer at Schottky contact. (a) I–V characteristics and (b) following diode parameters of the CuMn diodes considering both the annealing temperature from 200 °C to 350 °C and the Ga concentration in a-IGZO in the vicinity of Pt interface from 25.5 to 42.5 at%. When the ratio of the stabilizing Ga cation at the Schottky interface increases, the reverse current density was well maintained after the post-fabrication annealing process, which was verified by the behavior of the Schottky barrier height and ideality factor.

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