Figure 4
Mechanical analysis for structural changes of a-IGZO with respect to Ga concentration. (a) Schematic illustrations of In situ wafer curvature measurement system using a multibeam optical sensor. (b) Schematic cross-sectional images of multilayered thin films for curvature measurement. An additional Al/Ta/Mo layer was deposited for encapsulation. (b) Curvature changes in a-IGZO thin films during the heat cycle and (c) measured TSR, Tg and maximum curvature change (Δκ) as a function of the Ga concentration in a-IGZO.
