Table 2 Binding energy of the observed bands at Γ, X, W, and K high symmetry points and corresponding direct and indirect gap values Eg from ARPES measurements.

From: Three-dimensional band structure and surface electron accumulation of rs-CdxZn1−xO studied by angle-resolved photoemission spectroscopy

 

x = 1.0

0.83

0.60

L3 (VBM)

0.91

1.24

1.49

Γ15

1.92

2.18

2.27

X′5

3.13

3.48

2.4

X′4

5.14

5.50

5.74

W1

2.51

2.72

2.88

W3

4.13

4.44

5.1

n = 2 (eV)

0.19

0.23

—

n = 1 (eV)

0.43

0.47

—

m*/m0 (n = 1)

0.14

0.17

—

CBM

0.13

0.15

<0.5

band bending (eV)

0.87

0.76

0.82

z0 (Å)

26

32

—

ND (cm−3)

3.5 × 1019

2.0 × 1019

—

EgARPES, (direct)

1.79

2.03

~2.0

EgARPES (indirect)

0.78

1.09

~1.2

  1. The position of bulk CBM and the depth of surface potential and corresponding charge concentration were determined to reproduce the binging energies of quantized sub-bands with n = 1 and 2.
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