Figure 2
From: New type of doping effect via metallization of surface reduction in SnO2
Dependence of electrical characteristics in SnO2 thin film and composition of SnO2 NWs on microwave energy irradiation time and HRTEM of SnO2 NW with 5 min of MW irradiation. (a) Carrier concentration, hall mobility, and resistivity of SnO2 thin film obtained after microwave (MW) irradiation for 0, 1, 3, 5, and 8 min. (b–e) Elemental analysis for comparison of the ratio of Sn and O after different MW energy irradiation durations: (b) 1 min, (c) 3 min, (d) 5 min, and (e) 8 min. All data shown indicate the best oxidation rate when MW was irradiated for 5 min, regardless of the dimension of the SnO2 sample. (f) Interplanar spacings of SnO2, SnO, Sn with 5 min of MW irradiation.
