Figure 4 | Scientific Reports

Figure 4

From: Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Figure 4The alternative text for this image may have been generated using AI.

n-type NC-FET with a reduced hysteresis. (a) Performance of an n-type NC-FET with a small hysteresis of 150 mV and a swing below 30 mV/decade while Vds is set to 100 mV (b). A steep off-to-on transition is realized in both positive and negative going branches of the drain current. (c) Internal voltage measurement shows a voltage gain of up to 10 V/V. (d) The extracted P-E curve of the ferroelectric shows a clear S-shape in a wide range of operation with a negligible hysteresis. (e) gm/Id is also boosted and reached a factor of 600 V−1.

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