Figure 5 | Scientific Reports

Figure 5

From: Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Figure 5

Hysteretic p-type NC-FET. (a) Transfer characteristic of a p-type NC-FET with a large hysteresis of 3 V (|Vds| = 900 mV) and a swing of 15 mV/decade over five decades of current. (b) An internal voltage gain greater than one is measured in both positive and negative going branches (c). Current efficiency factor is also enhanced, reaching a factor of 105 V−1.

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