Table 1 DC characteristic results of vertical n-p-n GaN NW FETs (average value) with NW numbers of 1, 9, and 100 and a diameter of 440 nm.
From: Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Number of NW (#) | Vth (V) | Id,max (µA) | Id,max_norm (µA/µm) | Ion/Ioff | Ion/Ioff_norm |
|---|---|---|---|---|---|
1 | (6.4 ± 0.2) | (3.2 ± 2.1) | (2.3 ± 1.5) | 105 | 105 |
9 | (6.6 ± 0.3) | (33.5 ± 9.9) | (2.6 ± 0.9) | 106 | 105 |
100 | (6.4 ± 0.5) | (230.7 ± 59.4) | (1.7 ± 0.4) | 107 | 105 |
