Figure 4 | Scientific Reports

Figure 4

From: Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Figure 4

Model fitting of the capacitance versus frequency curves for the measured data (solid symbols) and calculated data from distributed border trap model (solid lines) using physical thickness (tox) at an applied DC gate bias of 1 V. The fitting was performed for three different deposition conditions of Al2O3 on n-InGaAs. Shown here are the (a) RTA conditions and (b) FGA conditions.

Back to article page