Figure 7
(a) Extracted border trap density (Nbt) and (b) interface trap density (Dit) comparisons between two different annealing processes of Al2O3/n-InGaAs samples according to their different deposition temperatures.
Figure 7 | Scientific Reports
(a) Extracted border trap density (Nbt) and (b) interface trap density (Dit) comparisons between two different annealing processes of Al2O3/n-InGaAs samples according to their different deposition temperatures.
