Figure 8

Spatial distribution of border trap density (Nbt) as a function of applied gate voltage, as well as the location in an Al2O3 dielectric from the Al2O3/n-InGaAs interface.

Spatial distribution of border trap density (Nbt) as a function of applied gate voltage, as well as the location in an Al2O3 dielectric from the Al2O3/n-InGaAs interface.