Table 1 Summary of parameters used for the extraction of border trap density.

From: Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Sample

RTA-Processed Samples

FGA-Processed Samples

Parameter

200 °C

250 °C

300 °C

200 °C

250 °C

300 °C

tox [nm]

4.2006

3.867

3.5128

4.2006

3.867

3.5128

CET [nm]

2.67

2.469

2.31

2.95

2.62

2.4

εr

6.93

6.71

6.26

5.87

6.24

6.07

m*

0.23

0.23

0.23

0.23

0.23

0.23

Eb [eV]

3.65

3.65

3.65

3.65

3.65

3.65

k [nm−1]

4.5

4.5

4.5

4.5

4.5

4.5

Cs [μF/cm2]

1.08

1.143

1.22

1.08

1.143

1.22

τ0 [s] (Using tox)

1 × 10−11

1 × 10−12

1 × 10−12

1 × 10−12

1 × 10−12

1 × 10−13

τ0 [s] (Using CET)

3 × 10−11

1 × 10−11

1 × 10−12

1 × 10−12

1 × 10−11

1 × 10−13

Nbt [cm−3 eV−1] (Using tox)

1.28 × 1020

1.1 × 1020

1 × 1020

9.6 × 1019

9.75 × 1019

7.6 × 1019

Nbt [cm−3 eV−1] (Using CET)

4 × 1019

4.1 × 1019

3.09 × 1019

2.98 × 1019

3.58 × 1019

2.72 × 1019

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