Figure 2 | Scientific Reports

Figure 2

From: Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Figure 2

Optical analysis and energy band diagram of insulator-oxide semiconductor films. (a) XPS O 1s, Al 2p peak in Al2O3 made with 0.01 mTorr condition. The inset is the measurement of the band gap of 0.01 mTorr-Al2O3 using onset of electron energy loss spectra. (b) Entire UPS spectra of 0.01 mTorr-Al2O3. Cut-off and VBM energy of 10 mTorr-Al2O3 are 17.7 and 5.88 eV, respectively. (c) Entire UPS spectra of IGZO. Cut-off and VBM energy of IGZO are 16.13 and 3.11 eV, respectively. (d) Energy band diagram of Al2O3/IGZO heterogeneous films. CB offset between Al2O3 and IGZO is 2.1 eV. Electron affinity of Al2O3 and IGZO are 2.88 and 4.97 eV. Band gap of Al2O3 and IGZO are 6.5 and 3.21 eV.

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