Figure 3 | Scientific Reports

Figure 3

From: Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor

Figure 3

Device characteristics initially and after pulsed high-voltage stress was applied. The black solid line indicates the initial I–V characteristics under Vds = 0.1 V. The blue and red dashed lines are the I–V sweep signals after the stress. (a) I–V characteristics after the 1 kHz square-type pulsed signal (duty rate 10% and 40 V amplitude) at the gate side. (b) I–V characteristics after the 1 kHz square type pulsed signal (duty rate 10% and 40 V amplitude) at the drain side. The gap between the initial shifted and stressed I–V characteristic curve is marked with filled red color.

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