Figure 4
TCAD device simulation by adding sub-gap states. (a) Density of the state of the pristine device and (b) I–V characteristics of initial experimental and simulated data. nta, nga, ntd, and ngd are the number of acceptor-like tail states, acceptor-like Gaussian states, donor-like tailing states, and donor-like Gaussian states, respectively. (c) Electron concentration of the pristine device at Vds = 0.1 V with Vg = 5 V. After application of the constant bias stress, (d) the density of states was extracted and (e) simulated (dashed line) the I–V characteristic; (f) 2-dimensional electron concentration distribution. (g) Density of state for the pulsed-HVDS device and (h) the I–V sweep is simulated (dashed line) and compared with experimental data (open circle). An asymmetrical local defect state (ALDS) is located at the edge of the drain electron and (i) the electron concentration is disturbed by the ALDS. The rainbow bar tape is the scale bar for electron concentration.
