Figure 6 | Scientific Reports

Figure 6

From: Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor

Figure 6

Map of key parameters for hump phenomenon. (a) I–V characteristics as function of the nga and wga parameters; hump A = 8 × 1019 cm−3 eV−1 and 0.005 eV, hump B = 1 × 1019 cm−3 eV−1 and 0.06 eV, and hump C = 5 × 1018 cm−3 eV−1 and 0.12 eV. sh1 and sh2 indicate the current of the first and second shoulders in the hump, respectively. (b) Gap of current (GOC) between sh1 and sh2 as a function of the number of acceptor-like Gaussian defects (nga) and their width (wga). The dashed red line indicates the borderline greater than 10−10 A of sh1. In the defect position, the energy level of the nga is fixed as 0.157 eV.

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