Figure 4 | Scientific Reports

Figure 4

From: Crystallization properties of arsenic doped GST alloys

Figure 4The alternative text for this image may have been generated using AI.

Switching studies of (GST)1−xAsx based memory devices. The device structure is a planar, circular sandwich geometry with Pt(100 nm)/PCM(500 nm)/Al(300 nm). The diameter of the active area of the device is 350 μm.

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