Figure 7
From: Modification of spintronic terahertz emitter performance through defect engineering
Roadmap to efficient spintronic THz-emitters with high signal strength and broad bandwidth. Here, \({\Theta }_{{\rm{SH}}}\) is the spin-Hall-angle, λSD is the spin-diffusion-length, T and \({\tau }_{{\rm{el}}}\) are the interface transmission parameter and the elastic scattering lifetime, respectively. tFM, tNM, σFM and σFM are the FM and NM layer thickness and electrical conductance, respectively. ni and \({\kappa }_{{\rm{i}}}\) are the index of refraction and the absorption coefficient of all involved layers (metalls and insulators) in the THz-range, respectively. Mtot is the transfer matrix for the total layer stack.
