Figure 5
SEM images of (a) Si1-x-yGexSny and (b) Si0.889Ge0.111 films after 15 s RTA. (c) Mass concentration of Ge and Sn atoms analyzed by EDS at point 1, 2, and point 3 in the Si1-x-yGexSny sample after RTA at 1100 °C for 15 seconds.
Figure 5 | Scientific Reports
