Figure 2
From: Time and rate dependent synaptic learning in neuro-mimicking resistive memories
Microstructural and compositional analyses of the STOx synaptic devices. (a) STEM cross-section of a switching device in its LRS. Scale bar 20 nm. (b) STEM cross-section of a switching device in its HRS. Scale bar 20 nm. (c) The EELS O–K edge area map of the enclosed region of interest in (a). The colour bar shows the relative oxygen content. (d) The EELS O–K edge area map of the enclosed region of interest in (b). The colour bar shows the relative oxygen content. (e) The EELS Ti–L2,3 edge profiles along a line scan across the ROI in (a). (f) The EELS Ti–L2,3 edge profiles along a line scan across the ROI in (b).
