Figure 1
From: Diamond Etching Beyond 10 μm with Near-Zero Micromasking
Effect of the Proportion of Oxygen in the Ar/O2 Plasma on (a) Diamond and Aluminium Etch Rates and (b) micromasking Particle Count. As the proportion of oxygen increased, the diamond etch rate also increased whilst the aluminium etch rate reduced. Micromasking was lowest at 20% O2. The 30° tilted SEM images (c) illustrate the reduction in micromasking observed between 20 and 30% oxygen (410 nm and 489 nm etch depth, respectively). The light grey/white features are protruding, with the square mesa in the centre and micromasking defects around it. The area observed in (c) is smaller than the unit area but was chosen to highlight the extent of contrast in micromasking.
