Figure 1

(a) Symmetric ω-2θ XRD scan of an AlGaN layer grown on a (\(10\bar{{\rm{1}}}3\)) AlN/m-plane sapphire template with RAlGaN = 0.2. The inset shows azimuthal scans of the {\(\mathrm{20}\bar{{\rm{2}}}4\)} sapphire and {0002} AlxGa1−xN diffraction peaks performed in skew symmetry. (b) 2θ scans of the (\(10\bar{{\rm{1}}}3\)) AlxGa1−xN diffraction peaks of the layers grown on (\(10\bar{{\rm{1}}}3\)) AlN templates with different RAlGaN.